Efficient Power Conversion (EPC) has commenced mass production for its new series of 100 V integrated gallium nitride (GaN) power-stage ICs, featuring models EPC23108, EPC23109, EPC23110, and EPC23111. These ePower™ Stage ICs are crafted for high-performance motion-control tasks, integrating high-side and low-side eGaN® FETs, gate drivers, and level-shifting circuitry into compact, thermally efficient QFN packages. The devices offer operation up to 100 V with current ratings of 35 A and 20 A, depending on the specific model, aiming to enhance power density and efficiency while simplifying system design.
The suite of products boasts features such as rapid fault shutdown, secure gate control during power-loss scenarios, and continuous 100% duty-cycle operation. It also includes single-input PWM options tailored for multi-axis motor-control applications. To support these innovations, EPC has introduced evaluation boards—EPC91128, EPC91129, EPC91130, and EPC91131—designed around the new power-stage ICs. These platforms come equipped with gate drivers, current and voltage sensing, housekeeping power supplies, and temperature monitoring and protection functions.
Available through EPC’s global distribution network, including major distributors like Digi-Key and Mouser, these new devices target applications in humanoid robots, drones, industrial motor drives, medical equipment, synchronous rectification, and high-density DC-DC converters. Pricing for the EPC23108 and EPC23109 models is set at $3.70 each, while the EPC23110 and EPC23111 are available at $2.47 each, based on orders of 3,000 units. The EPC91128 and EPC91129 evaluation boards are priced at $640 each, with the EPC91130 and EPC91131 slightly lower at $630 each.
To provide further insights into these technological advancements, EPC is releasing a technical white paper in both English and Chinese. This document will cover the architecture, design considerations, and evaluation platforms for the new integrated GaN power-stage ICs. Founded in 2007, EPC specializes in enhancement-mode gallium nitride (eGaN®) power devices and integrated circuits, serving applications in DC-DC converters, lidar, motor drives, robotics, drones, and satellite systems.
Legal Disclaimer: The information contained in this article has been provided by independent third-party contributors, clients, or content partners. We do not independently verify the accuracy, completeness, legality, ownership, licensing, or reliability of submitted content, including text, images, videos, trademarks, or other media materials. The submitting party is solely responsible for ensuring that all content, including images and media assets, complies with applicable copyright, trademark, licensing, and intellectual property laws. We disclaim liability for any unauthorized use of copyrighted or proprietary materials by third parties. If you believe that any content published on this platform infringes your intellectual property rights, kindly contact the author above for prompt review and resolution.
